Emberion is a leading-edge deep technology company that recently brought its first high-performance infrared camera products to the market. We are now looking for a device physicist to help develop our next-generation mid-wave infrared (MWIR) and wide spectral range products.
Emberion develops and produces revolutionary photo and thermal detectors and imagers for night vision, machine vision, spectroscopy, and hyperspectral imaging applications. Our nanomaterials and electronics design know-how create a unique differentiation for our products.
Our primary products are cameras and sensors for visible to shortwave infrared (VIS-SWIR) imaging. In addition, Emberion’s pipeline of products under development includes MWIR, thermal, and multispectral imaging technologies.
We employ more than 30 people at our locations in Cambridge, UK and Espoo, Finland. The team has years-long experience in both product creation and applied research. We collaborate closely with key research organizations at both locations and are also a member of the European Graphene Flagship program. Emberion spun-out from Nokia Technologies as an independent SME in 2016.
About the role
As a member of the Cambridge R&D team you will contribute to the development of our MWIR and thermal detectors and their combination with our vis-SWIR devices in single focal-plane arrays.
You will design and model new concepts for IR photodetectors, then work with the process team to fabricate, test and validate these structures in working devices. You will bring in your unique competences to expand the company’s expertise and learn quickly the knowns (from the team) and solve the unknowns (from your own efforts) of our business and related technologies.
Specifically, you will:
- Design and model optical/thermal absorber layer-stacks in our detector pixels, with particular emphasis on low band-gap semiconductor materials
- Define the process steps required to fabricate optical detectors based upon these designs
- Execute experiments to develop new device architectures and follow up to achieve functional prototypes.
- Verify device performance with suitable setups optimized for the mid- and long-IR (3-5 mm and above), correlating fabrication process conditions and performance
- Work with the process team to migrate small-scale R&D runs to CMOS-integrated manufacturing of Emberion’s broadband imager products
- Become a valued member of the R&D team by being a team player, able to take direction and to facilitate open and constructive communication
The role is based in Cambridge, UK.
Ideally, you will have experience of IR detector development. Energy-band engineering in low band-gap photo-absorbers (including semiconductor thin films or quantum dots) is of particular interest. You will show evidence of having:
- A Ph.D. in physics, material science, or an equivalent research qualification, focused on the fabrication and development of optoelectronic devices
- An in-depth understanding and proven experience in the engineering of low band-gap optical absorbing layers and devices. Knowledge of low-dimensional material physics is a plus
- Experience of optical characterization setups for the mid- and long-IR (3-5 mm and above)
- Experience working in a semiconductor fab or chemical laboratory and adhering to COSHH and H&S regulations
- Outstanding attention to details and ability to deal with the unknown
- Excellent communication skills, both verbal and written, and adaptable to different audiences (e.g., scientists, customers, investors, politicians, etc.)
- A can-do and team-player attitude
- Experience with solution-based processes, vacuum deposition, patterning techniques, spin-coating, inert atmosphere glovebox operation
- Electro-optical testing and characterisation using a probe station and parameter analyser
- Knowledge of laboratory information management systems or other web-based systems would be advantageous.
This role is varied, and a great opportunity to broaden your skill base in a rapidly growing new business.